Home Products Diodes Transistors And Thyristors Power Mosfet Transistors Infineon Technologies IPG20N06S4L26ATMA1
Attribute
Description
Manufacturer Part Number
IPG20N06S4L26ATMA1
Manufacturer
Description
MOSFET 2N-CH 60V 20A 8TDSON
Manufacturer Lead Time
26 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | OptiMOS™ | |
| IC Encapsulation Type | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® | |
| Availability Status | Active | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 2 N-Channel (Dual) | |
| Transistor Special Function | Logic Level Gate | |
| Drain-Source Breakdown Volts | 60V | |
| Continuous Drain Current at 25C | 20A | |
| Max On-State Resistance | 26mOhm @ 17A, 10V | |
| Max Threshold Gate Voltage | 2.2V @ 10µA | |
| Max Gate Charge at Vgs | 20nC @ 10V | |
| Max Input Cap at Vds | 1430pF @ 25V | |
| Maximum Power Handling | 33W | |
| Ambient Temp Range | -55°C ~ 175°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-PowerVDFN | |
| Vendor Package Type | PG-TDSON-8-4 |
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